A long-standing puzzle regarding the Si(111)-2x1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photo- emission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.
Bussetti, G., Bonanni, B., Cirilli, S., Violante, A., Russo, M., Goletti, C., et al. (2011). Coexistence of Negatively and Positively Buckled Isomers on n+ Doped Si(111)-2x1. PHYSICAL REVIEW LETTERS, 106, 067601 [10.1103/PhysRevLett.106.067601].
Coexistence of Negatively and Positively Buckled Isomers on n+ Doped Si(111)-2x1
BUSSETTI, GIANLORENZO;BONANNI, BEATRICE;GOLETTI, CLAUDIO;CHIARADIA, PIETRO;PULCI, OLIVIA;PALUMMO, MAURIZIA;DEL SOLE, RODOLFO;
2011-01-01
Abstract
A long-standing puzzle regarding the Si(111)-2x1 surface has been solved. The surface energy gap previously determined by photoemission on heavily n-doped crystals was not compatible with a strongly bound exciton known from other considerations to exist. New low-temperature angle-resolved photo- emission and scanning tunneling microscopy data, together with theory, unambiguously reveal that isomers with opposite bucklings and different energy gaps coexist on such surfaces. The subtle energetics between the isomers, dependent on doping, leads to a reconciliation of all previous results.| File | Dimensione | Formato | |
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