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Mostrati risultati da 1 a 100 di 213
Data di pubblicazione Titolo Autore(i) Tipo File
1-nov-2023 AM/AM and AM/PM Characterization of a GaN Phase and Amplitude Setting Circuit Colangeli, S; Das, A; Longhi, Pe; Ciccognani, W; De Angelis, E; Bolli, F; Limiti, E Articolo su rivista
1-mar-2023 A Bound on the Scattering Parameters of Unconditionally Stable N-Ports Colangeli, S; Ciccognani, W; Serino, A; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2023 32–36-GHz Single-Chip Front-End MMIC Featuring 35-dBm Output Power and 3.2-dB Noise Figure With 60-and 100-nm GaN/Si HEMTs Longhi, Pe; Pace, L; Costanzo, F; Ciccognani, W; Colangeli, S; Giofre, R; Leblanc, R; Suriani, A; Vitobello, F; Limiti, E Articolo su rivista
1-gen-2023 Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications Longhi, Pe; Ciccognani, W; Colangeli, S; Limiti, E Articolo su rivista
1-gen-2023 32 dBm IP1dB / 46 dBm IIP3 GaN Phase-Amplitude Setting Circuit at Ku-Band Longhi, Pe; Colangeli, S; Ciccognani, W; Das, A; Sharma, S; Sharma, Ss; Limiti, E Articolo su rivista
1-gen-2023 Low-Noise Amplifiers in Gallium Nitride for Robust and Highly Linear Ka-Band SATCOM Longhi, Pe; Pace, L; Ciccognani, W; Colangeli, S; Limiti, E Intervento a convegno
1-gen-2023 Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier with Gain Control at W-band Longhi, Pe; Serino, A; Ciccognani, W; Colangeli, S; Sharma, Ss; Sharma, S; Limiti, E Intervento a convegno
1-apr-2022 New Proofs of the Two-Port Networks Unconditional Stability Criteria Based on the Rollett K Parameter Serino, A; Ciccognani, W; Colangeli, S; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2022 Ultralow-power digital control and signal conditioning in GaAs MMIC core chip for X-band AESA systems Ramella, C; Longhi, Pe; Pace, L; Nasri, A; Ciccognani, W; Pirola, M; Limiti, E Articolo su rivista
1-gen-2022 E- to K-band GaAs Sub-Harmonic Mixer Design and Characterization Pace, L; Longhi, Pe; Ciccognani, W; Colangeli, S; Deborgies, F; Limiti, E Intervento a convegno
1-gen-2022 Comparative Evaluation of Optimum Power and Efficiency Terminations Predicted by Alternative Methods for GaN Ka-band Power Amplifier Design Costanzo, F; Longhi, Pe; Kantanen, M; Giofre, R; Ciccognani, W; Colangeli, S; Quaglia, R; Varonen, M; Tasker, P; Limiti, E Intervento a convegno
1-gen-2022 The Stability Radius: A New Indicator of Unconditional Stability for N-Port Linear Networks Colangeli, S; Ciccognani, W; Serino, A; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2022 DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure Pace, L; Longhi, Pe; Ciccognani, W; Colangeli, S; Vitulli, F; Deborgies, F; Limiti, E Articolo su rivista
1-gen-2022 GaN-on-Si Ka-band Single-Chip Front-End MMIC for Earth Observation Payloads Longhi, Pe; Costanzo, F; Pace, L; Ciccognani, W; Colangeli, S; Giofre, R; Leblanc, R; Vitobello, F; Limiti, E Intervento a convegno
1-gen-2022 A Transmitter Protection Scheme through Reciprocal Elements Colangeli, S; Ciccognani, W; Longhi, Pe; Serino, A; Limiti, E Intervento a convegno
1-gen-2022 Checking Rollett's Proviso for Degenerated Devices through S-Parameter Analysis Colangeli, S; Longhi, Pe; Ciccognani, W; Serino, A; Limiti, E Intervento a convegno
1-gen-2021 Linear characterization and modeling of GaN-on-Si HEMT technologies with 100 nm and 60 nm gate lengths Colangeli, S; Ciccognani, W; Longhi, Pe; Pace, L; Poulain, J; Leblanc, R; Limiti, E Articolo su rivista
1-gen-2021 A Derating-Rules Compliant Ka-Band GaN-on-Si Power Amplifier Designed for Highly Reliable Satellite Applications Costanzo, F; Pace, L; Longhi, Pe; Ciccognani, W; Colangeli, S; Leblanc, R; Limiti, E Intervento a convegno
1-gen-2021 A MMIC Low-Noise Amplifier realized with two different gate length GaN-on-Si technologies Pace, L; Longhi, Pe; Ciccognani, W; Colangeli, S; Leblanc, R; Limiti, E Intervento a convegno
1-gen-2021 Novel design charts for optimum source degeneration tradeoff in conjugately matched multistage low-noise amplifiers Longhi, Pe; Pace, L; Colangeli, S; Ciccognani, W; Limiti, E Articolo su rivista
1-gen-2021 Broadband amplifier design technique by dissipative matching networks Ciccognani, W; Colangeli, S; Longhi, Pe; Serino, A; Giofre, R; Pace, L; Limiti, E Articolo su rivista
1-gen-2021 Extending the ohtomo stability test to large-signal solutions in a commercial circuit simulator Colangeli, S; Ciccognani, W; Longhi, Pe; Pantoli, L; Leuzzi, G; Limiti, E Articolo su rivista
1-gen-2021 Source/load-pull noise measurements at ka band Colangeli, S; Ciccognani, W; Longhi, Pe; Pace, L; Serino, A; Poulain, J; Leblanc, R; Limiti, E Articolo su rivista
4-nov-2020 S-band hybrid amplifiers based on hydrogenated diamond FETs Ciccognani, W; Colangeli, S; Verona, C; Di Pietrantonio, F; Cannatà, D; Benetti, M; Camarchia, V; Pirola, M; Longhi, Pe; Verona Rinati, G; Marinelli, M; Limiti, E Articolo su rivista
1-gen-2020 Stretchable conductors made of single wall carbon nanotubes self-grafted on polymer films Fazi, L; Prioriello, A; Scacco, V; Ciccognani, W; Serra, E; Mirabile Gattia, D; Morales, P; Limiti, E; Senesi, R Intervento a convegno
1-gen-2020 Design of a ka-band single-chip front-end based on a 100 nm GaN-on-Si technology Pace, L; Costanzo, F; Longhi, Pe; Ciccognani, W; Colangeli, S; Suriani, A; Leblanc, R; Limiti, E Intervento a convegno
1-gen-2020 Low power GaAs digital and analog functionalities for microwave signal conditioning in AESA systems Ramella, C; Longhi, Pe; Nasri, A; Pace, L; Ciccognani, W; Estebsari, M; Pirola, M; Limiti, E Intervento a convegno
1-gen-2020 A Test for Unconditional Stability Based on Polynomial Convexification Colangeli, S; Ciccognani, W; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2020 V-Band GaAs Metamorphic Low-Noise Amplifier Design Technique for Sharp Gain Roll-Off at Lower Frequencies Longhi, Pe; Pace, L; Colangeli, S; Ciccognani, W; Leblanc, R; Limiti, E Articolo su rivista
1-gen-2020 Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices Colangeli, S; Ciccognani, W; Serino, A; Longhi, Pe; Pace, L; Poulain, J; Leblanc, R; Limiti, E Articolo su rivista
1-gen-2020 C to V-band Cascode Distributed Amplifier Design Leveraging a Double Gate Length Gallium Nitride on Silicon Process Longhi, Pe; Colangeli, S; Ciccognani, W; Pace, L; Leblanc, R; Limiti, E Intervento a convegno
1-gen-2020 Design and validation of 100 nm GaN-On-Si Ka-Band LNA based on custom noise and small signal models Pace, L; Colangeli, S; Ciccognani, W; Longhi, Pe; Limiti, E; Leblanc, R; Feudale, M; Vitobello, F Articolo su rivista
1-gen-2020 A C-Band GaN Single Chip Front-End for SAR Applications Giofre, R; Ciccognani, W; Colangeli, S; Feudale, M; Lanzieri, C; Polli, G; Salvucci, A; Suriani, A; Vittori, M; Limiti, E Intervento a convegno
1-dic-2019 Development of a V-Band MMIC chip-set for in-orbit Inter-Satellite Links Pace, L; Longhi, Pe; Fenu, S; Ciccognani, W; Colangeli, S; Limiti, E Intervento a convegno
1-giu-2019 A Times-4 Frequency Multiplier from K- to W-band Pace, L; Salvucci, A; Fenu, S; Ciccognani, W; Longhi, Pe; Colangeli, S; Limiti, E; Frtjlink, P; Renvoise, M Intervento a convegno
1-mag-2019 Stability of H-Terminated Diamond MOSFETs With V 2 O 5 /Al 2 O 3 as Gate Insulator Verona, C; Benetti, M; Cannata, D; Ciccognani, W; Colangeli, S; Di Pietrantonio, F; Limiti, E; Marinelli, M; Verona-Rinati, G Articolo su rivista
1-apr-2019 Improved microwave attenuator topology minimizing the number of control voltages Longhi, Pe; Colangeli, S; Ciccognani, W; Limiti, E Articolo su rivista
1-feb-2019 A GaN Single-Chip Front End With Improved Efficiency and Power by Using Class F Approach Giofre, R; Costanzo, F; Ciccognani, W; Colangeli, S; Limiti, E Articolo su rivista
1-gen-2019 Design of a MMIC low-noise amplifier in industrial gallium arsenide technology for E-band 5G transceivers Ciccognani, W; Colangeli, S; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2019 Design of a GaN-on-Si Single-Balanced Resistive Mixer for Ka-band Satcom De Padova, A; Longhi, Pe; Colangeli, S; Ciccognani, W; Limiti, E Articolo su rivista
1-gen-2019 Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives Longhi, Pe; Pace, L; Colangeli, S; Ciccognani, W; Limiti, E Articolo su rivista
1-gen-2019 GaN/Si ka-band SPDT for observation payloads Polli, G; Longhi, Pe; Colangeli, S; Fenu, S; Costanzo, F; Ciccognani, W; Limiti, E Intervento a convegno
1-gen-2019 A straightforward design technique for narrowband multi-stage low-noise amplifiers with I/O conjugate match Salvucci, A; Longhi, Pe; Colangeli, S; Ciccognani, W; Serino, A; Limiti, E Articolo su rivista
1-gen-2019 A Generalized Unterminating Technique for Characterizing Reciprocal Three-Port Networks Colangeli, S; Ciccognani, W; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2019 A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology Pace, L; Ciccognani, W; Colangeli, S; Longhi, Pe; Limiti, E; Leblanc, R Intervento a convegno
1-gen-2019 Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies Ciccognani, W; Colangeli, S; Serino, A; Pace, L; Fenu, S; Longhi, Pe; Limiti, E; Poulain, J; Leblanc, R Intervento a convegno
1-gen-2019 On the Optimum Noise-Gain Locus of Two-Ports Colangeli, S; Longhi, Pe; Ciccognani, W; Limiti, E Articolo su rivista
1-dic-2018 A Simple Test to Check the Inherent-Stability Proviso on Field-Effect Transistors Colangeli, S; Giofre, R; Ciccognani, W; Limiti, E Articolo su rivista
1-nov-2018 An S-Band GaN MMIC High Power Amplifier with 50W Output Power and 55% Power Added Efficiency Giofre, R; Costanzo, F; Colangeli, S; Ciccognani, W; Sotgia, M; Cirillo, M; Limiti, E Intervento a convegno
1-nov-2018 A GaN-on-Si MMIC Doherty Power Amplifier for 5G Applications Giofre, R; Del Gaudio, A; Ciccognani, W; Colangeli, S; Limiti, E Intervento a convegno
1-ott-2018 MiGaNSOS: Millimetre wave Gallium Nitride Space evaluation and application to Observation Satellites Limiti, E; Ciccognani, W; Colangeli, S; Varonen, M; Leblanc, R; Poulain, J; Marilier, M; Suriani, A; Feudale, M Intervento a convegno
1-ott-2018 C-Band TR Modules Chipset for Next Generation GaN Based Radar Pantellini, A; Lucibello, A; Nanni, A; Natali, M; Lanzieri, C; Limiti, E; Colangeli, S; Ciccognani, W; Giofrè, R; Suriani, A; Feudale, M; Mannocchi, G Intervento a convegno
1-set-2018 Q/V band LNA for satellite on-board space applications using a 70 nanometers GaAs mHEMT commercial technology Ciccognani, W; Longhi, Pe; Colangeli, S; Limiti, E Articolo su rivista
1-ago-2018 A high-performance C-band integrated front-end in AlGaN/GaN technology Polli, G; Del Gaudio, A; De Padova, A; Colangeli, S; Ciccognani, W; Giofre, R; Salvucci, A; Limiti, E Intervento a convegno
1-ago-2018 S-Band GaN Single-Chip Front End for Active Electronically Scanned Array With 40-W Output Power and 1.75-dB Noise Figure Giofre, R; Colangeli, S; Ciccognani, W; Costanzo, F; Polli, G; Salvucci, A; Vittori, M; Sotgia, M; Cirillo, M; Limiti, E Articolo su rivista
1-lug-2018 Single MMIC receivers for C-band T/R module in 0.25 μm GaN technology Salvucci, A; Polli, G; De Padova, A; Colangeli, S; Costanzo, F; Ciccognani, W; Limiti, E Intervento a convegno
1-lug-2018 Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology Polli, G; Vittori, M; Ciccognani, W; Colangeli, S; Costanzo, F; Salvucci, A; Limiti, E Intervento a convegno
1-giu-2018 Integrated Microwave Functionalities and Spatial Combiners for Space and Defense Applications Ciccognani, W; Colangeli, S; Costanzo, F; Di Paolo, F; Giofré, R; Polli, G; Salvucci, A; Vittori, M; Limiti, E Intervento a convegno
1-giu-2018 GaN-based single-chip front-ends for radar systems Ciccognani, W; Colangeli, S; Costanzo, F; Di Paolo, F; Giofré, R; Polli, G; Salvucci, A; Vittori, M; Limiti, E Intervento a convegno
1-giu-2018 A GaN Single-Chip Front-End for Active Electronically Scanned Arrays Ciccognani, W; Colangeli, S; Costanzo, F; Giofre, R; Polli, G; Salvucci, A; Vittori, M; Limiti, E; Sotgia, M; Cirillo, M Intervento a convegno
17-mag-2018 A GaN single chip front-end for C-band synthetic aperture radars Salvucci, A; Polli, G; Vittori, M; Giofre, R; Colangeli, S; Ciccognani, W; Limiti, E; Carosi, D; Feudale, M; Lanzieri, C; Suriani, A Intervento a convegno
1-apr-2018 Broadband Nonreciprocal Phase Shifter Design Technique Palomba, M; Palombini, D; Colangeli, S; Ciccognani, W; Limiti, E Articolo su rivista
1-mar-2018 GaN LNAs for Robust Receiving Systems in Radar and Space Applications Vittori, M; Colangeli, S; Ciccognani, W; Cleriti, R; Limiti, E Articolo su rivista
1-gen-2018 Generalized Extraction of the Noise Parameters by Means of Source-and Load-Pull Noise Power Measurements Ciccognani, W; Colangeli, S; Serino, A; Longhi, Pe; Limiti, E Articolo su rivista
1-gen-2018 Algorithmic Test of the Unconditional Stability of Three-Port Networks Colangeli, S; Ciccognani, W; Limiti, E Articolo su rivista
1-gen-2018 Three-stage GaN-on-SiC medium-power LNA exploiting a current-reuse architecture Colangeli, S; Vittori, M; Ciccognani, W; Limiti, E Articolo su rivista
1-gen-2018 High power-handling SPDT switch in 0.25-μm GaN technology Polli, G; Palomba, M; Colangeli, S; Ciccognani, W; Salvucci, A; Vittori, M; Limiti, E Articolo su rivista
1-nov-2017 Q-band self-biased MMIC LNAs using a 70 nm InGaAs/AlGaAs process Vittori, M; Polli, G; Ciccognani, W; Colangeli, S; Salvucci, A; Limiti, E Intervento a convegno
1-nov-2017 Deterministic design of simultaneously matched, two-stage low-noise amplifiers Colangeli, S; Ciccognani, W; Salvucci, A; Limiti, E Intervento a convegno
1-nov-2017 A novel current-reuse architecture demonstrated on a two-stage GaN-on-SiC LNA Colangeli, S; Ciccognani, W; Vittori, M; Palomba, M; Limiti, E Intervento a convegno
1-ott-2017 D-band LNA using a 40-nm GaAs mHEMT technology Cleriti, R; Ciccognani, W; Colangeli, S; Serino, A; Limiti, E; Frijlink, P; Renvoise, M; Doerner, R; Hossain, M Intervento a convegno
1-ago-2017 Verifying Rollett's proviso on active devices under arbitrary passive embeddings Colangeli, S; Ciccognani, W; Palomba, M; Limiti, E Articolo su rivista
1-giu-2017 MMIC and Spatially Combined Millimeter-Wave Functionalities: LNA and HPA State-of-the-Art Cleriti, R; Colangeli, S; Ciccognani, W; Serino, A; Scucchia, L; Passi, D; Di Paolo, F; Limiti, E Intervento a convegno
1-giu-2017 GaN LNAs for Robust Receiving Systems in Radar and Space Applications Limiti, E; Ciccognani, W; Cleriti, R; Colangeli, S; Vittori, M Intervento a convegno
1-giu-2017 High performance X-band LNAs using a 0.25 μm GaN technology Vittori, M; Colangeli, S; Ciccognani, W; Salvucci, A; Polli, G; Limiti, E Intervento a convegno
1-giu-2017 A multi-finger modeling approach to correctly predict the inherent stability of a custom active device Colangeli, S; Giofre, R; Ciccognani, W; Limiti, E Intervento a convegno
1-gen-2017 Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs Colangeli, S; Ciccognani, W; Cleriti, R; Palomba, M; Limiti, E Articolo su rivista
1-gen-2017 Medium power X-Band LNA in 0.25 µm GaN technology Vittori, M; Colangeli, S; Ciccognani, W; Cleriti, R; Limiti, E Articolo su rivista
1-dic-2016 RF Energy Harvesting for DVB-T Signals Scucchia, L; Palomba, M; Ciccognani, W; Colangeli, S; Limiti, E Articolo su rivista
1-nov-2016 A Measurement-Based Approach to Model Scaling Properties of FETs Serino, A; Ciccognani, W; Colangeli, S; Limiti, E Articolo su rivista
1-set-2016 Comparative Study of Surface Transfer Doping of H-terminated Diamond by High Electron Affinity Insulators Marinelli, M; Verona, C; Verona-Rinati, G; Ciccognani, W; Colangeli, S; Limiti, E Intervento a convegno
1-set-2016 Vanadium pentoxide as an insulator for realizing H-diamond MISFETs Verona, C; Colangeli, S; Ciccognani, W; Verona-Rinati, G; Marinelli, M; Limiti, E; Benetti, M; Cannatà, D; Di Pietrantonio, F Intervento a convegno
1-set-2016 Hydrogen terminated diamond V2O5-based MISFETs Marinelli, M; Verona, C; Verona-Rinati, G; Ciccognani, W; Colangeli, S; Limiti, E; Benetti, M; Cannatà, D; Di Pietrantonio, F Intervento a convegno
1-lug-2016 Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; VERONA RINATI, G Articolo su rivista
1-giu-2016 Physics-based and Circuit Modelling of H-terminated Single-Crystal Diamond Microwave Power FETs Camarchia, V; Cappelluti, F; Ciccognani, W; Colangeli, S; Ghione, G; Pirola, M; Limiti, E; Moran, D; Verona, C Intervento a convegno
1-giu-2016 Study of Hydrogen-Terminated Diamond MISFETs with Vanadium Pentoxide as Insulator Colangeli, S; Verona, C; Ciccognani, W; Cleriti, R; Limiti, E Intervento a convegno
1-gen-2016 An EM-based approach to model a gallium nitride HEMT in a custom common-gate configuration Giofre', R; Colangeli, S; Ciccognani, W; Limiti, E Intervento a convegno
1-gen-2016 Characterization and modelling of 40 nm mHEMT process up to 110 GHz Cleriti, R; Ciccognani, W; Colangeli, S; Limiti, E; Frijlink, P; Renvoise, M Intervento a convegno
1-gen-2016 14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; Santoni, E; VERONA RINATI, G; Angelone, M; Pillon, M; Pompili, F; Benetti, M; Cannata', D; DI PIETRANTONIO, F Articolo su rivista
1-gen-2016 V2O5 MISFETs on H-Terminated Diamond Verona, C; Ciccognani, W; Colangeli, S; Limiti, E; Marinelli, M; VERONA RINATI, G; Cannata', D; Benetti, M; DI PIETRANTONIO, F Articolo su rivista
1-gen-2016 H-Terminated Diamond MISFETs with V2O5 as Insulator Colangeli, S; Verona, C; Ciccognani, W; Marinelli, M; Rinati, G; Limiti, E; Benetti, M; Cannata, D; Di Pietrantonio, F Intervento a convegno
1-ott-2015 Gate–Source distance scaling effects in H-terminated diamond MESFETs: optimization of layout and output current density Verona, C; Ciccognani, W; Colangeli, S; Di Pietrantonio, F; Giovine, E; Limiti, E; Marinelli, M; Verona-Rinati, G Intervento a convegno
1-lug-2015 An active low-noise termination in GaN technology Colangeli, S; Ciccognani, W; Palomba, M; Longhi, Pe; Limiti, E Intervento a convegno
1-giu-2015 Single-Chip Front-End for T/R Modules in GaN Technology Vittori, M; Colangeli, S; Palomba, M; Cipriani, E; Ciccognani, W; Colantonio, P; Limiti, E; Florian, C; Pirola, M; Feudale, M; Ayllon, N Intervento a convegno
1-mar-2015 Evaluation of coaxial cable performance under thermal gradients Colangeli, S; Cleriti, R; Ciccognani, W; Limiti, E Articolo su rivista
1-gen-2015 Realization and measurements of an RF energy harvesting circuit operating on several DVB-T channels Scucchia, L; Palomba, M; Ciccognani, W; Colangeli, S; Limiti, E Intervento a convegno
1-gen-2015 Investigation of microwave devices using diamond as a semiconductor material Limiti, E; Colangeli, S; Ciccognani, W; Verona, C; Giovine, E; Ghione, G; Moran, D Intervento a convegno
1-gen-2015 Numerical determination of coaxial cable parameters in cryogenic environments for high-frequency active device noise modeling Cleriti, R; Colangeli, S; Ciccognani, W; Palomba, M; Limiti, E Articolo su rivista
1-gen-2015 Black-box noise modeling of GaAs HEMTs under illumination Colangeli, S; Ciccognani, W; Limiti, E; Caddemi, A; Crupi, G Articolo su rivista
1-gen-2015 Gate-source distance scaling effects in H-terminated diamond MESFETs Verona, C; Ciccognani, W; Colangeli, S; DI PIETRANTONIO, F; Giovine, E; Limiti, E; Marinelli, M; VERONA RINATI, G Articolo su rivista
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